CPC H10K 10/474 (2023.02) [H03H 11/04 (2013.01); H10K 10/466 (2023.02); H10K 10/484 (2023.02); H10K 85/221 (2023.02)] | 20 Claims |
1. A thin film transistor comprising:
a gate electrode;
a carbon nanotube structure;
a gate insulating layer between the gate electrode and the carbon nanotube structure;
a source electrode and a drain electrode electrically insulated from each other and each electrically connected to the carbon nanotube structure; and
an interface charge layer between the carbon nanotube structure and the gate insulating layer, wherein the interface charge layer comprises charges captured by chemical molecular groups or water molecules.
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