CPC H03H 9/02259 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/0207 (2013.01); H03H 9/02102 (2013.01); H03H 9/0211 (2013.01); H03H 9/02157 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/568 (2013.01); H03H 2003/021 (2013.01); H03H 2009/02165 (2013.01)] | 34 Claims |
1. A bulk acoustic wave resonator comprising:
a substrate; and
a piezoelectric stack comprising first and second piezoelectric layers acoustically coupled with one another to have a piezoelectrically excitable resonance mode, in which the first piezoelectric layer has a first piezoelectric axis orientation, and the second piezoelectric layer has a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first piezoelectric layer, and in which the first and second piezoelectric layers have respective thicknesses so that the bulk acoustic wave resonator has a main resonant frequency that is in one of a super high frequency band and an extremely high frequency band,
in which the first piezoelectric layer includes a first pair of piezoelectric sublayers, and a first temperature compensating layer.
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