US 11,967,939 B2
Multi-layer raised frame in bulk acoustic wave device
Kwang Jae Shin, Yongin-si (KR); and Jiansong Liu, Irvine, CA (US)
Assigned to Skyworks Global Pte. Ltd., Singapore (SG)
Filed by Skyworks Global Pte. Ltd., Singapore (SG)
Filed on Jun. 30, 2021, as Appl. No. 17/364,479.
Application 17/364,479 is a continuation of application No. 16/576,529, filed on Sep. 19, 2019, granted, now 11,082,023.
Claims priority of provisional application 62/760,470, filed on Nov. 13, 2018.
Claims priority of provisional application 62/735,523, filed on Sep. 24, 2018.
Prior Publication US 2021/0344321 A1, Nov. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); H03F 3/189 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01); H03H 9/70 (2006.01); H03F 3/20 (2006.01); H04B 1/3827 (2015.01)
CPC H03H 9/02118 (2013.01) [H03F 3/189 (2013.01); H03H 9/0561 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 9/706 (2013.01); H03F 3/20 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H04B 1/3827 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A multiplexer comprising:
a first filter having a first passband, the first filter including a bulk acoustic wave resonator that includes first and second electrodes, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between a first electrode and the piezoelectric layer, the first raised frame layer having a lower acoustic impedance than the first electrode, and the second raised frame layer overlapping with the first raised frame layer; and
a second filter having a second passband, the second filter coupled to the first filter at a common node, and the first raised frame layer configured to move a raised frame mode of the bulk acoustic wave resonator away from the second passband.