CPC H01Q 21/0006 (2013.01) [H01P 3/121 (2013.01); H01P 3/16 (2013.01); H01Q 1/50 (2013.01); H01Q 21/24 (2013.01)] | 20 Claims |
1. An apparatus comprising:
a dielectric substrate;
a first metallic layer, wherein a bottom surface of the first metallic layer is coupled to a top surface of the dielectric substrate;
a through-hole, wherein the through-hole extends through the dielectric substrate and the first metallic layer;
a dielectric layer, wherein a bottom surface of the dielectric layer is coupled to a top surface of the first metallic layer;
a second metallic layer coupled to a top surface of the dielectric layer, wherein the second metallic layer comprises:
a non-conductive opening,
a plurality of feeds, wherein a first end of each feed is located in the non-conductive opening and a second end of each feed is a single-ended termination, and
an impedance transformer;
a third metallic layer coupled to a bottom surface of the dielectric substrate; and
a set of metallic via-holes positioned proximate the non-conductive opening in the second metallic layer, wherein the set of metallic via-holes electrically couple the second metallic layer to the third metallic layer.
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