US 11,967,667 B2
Micro light-emitting diode structure and micro light-emitting diode display panel using the same
Chee-Yun Low, Zhunan Township (TW); Fei-Hong Chen, Zhunan Township (TW); and Pai-Yang Tsai, Zhunan Township (TW)
Assigned to PLAYNITRIDE DISPLAY CO., LTD., Zhunan Township (TW)
Filed by PlayNitride Display Co., Ltd., Zhunan Township, Miaoli County (TW)
Filed on Oct. 14, 2021, as Appl. No. 17/501,310.
Claims priority of application No. 110115097 (TW), filed on Apr. 27, 2021.
Prior Publication US 2022/0344543 A1, Oct. 27, 2022
Int. Cl. H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/387 (2013.01) [H01L 33/20 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A micro light-emitting diode structure, comprising:
an epitaxial layer;
a reflecting layer disposed on the epitaxial layer;
a patterned electrode layer disposed between the epitaxial layer and the reflecting layer, wherein the patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other; and
a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.