US 11,967,651 B2
Silicon carbide power diode device and fabrication method thereof
Yonghong Tao, Xiamen (CN); Zhidong Lin, Xiamen (CN); and Zhigao Peng, Xiamen (CN)
Assigned to XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD., (CN)
Filed by Hunan Sanan Semiconductor Co., Ltd., Hunan (CN)
Filed on May 31, 2022, as Appl. No. 17/828,782.
Application 17/828,782 is a continuation of application No. 16/928,373, filed on Jul. 14, 2020, granted, now 11,437,525.
Claims priority of application No. 202010626793.3 (CN), filed on Jul. 1, 2020; application No. 202010626798.6 (CN), filed on Jul. 1, 2020; and application No. 202021269885.2 (CN), filed on Jul. 1, 2020.
Prior Publication US 2022/0293800 A1, Sep. 15, 2022
Int. Cl. H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/1608 (2013.01); H01L 29/456 (2013.01); H01L 29/66143 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A silicon carbide power diode device, comprising:
a silicon carbide substrate;
a silicon carbide epitaxial layer on a first surface of the silicon carbide substrate, the carbide epitaxial layer having an active region, and the active region having a surface away from the silicon carbide substrate;
a Schottky metal layer on the surface of the active region, the active region having an N-type region and a plurality of P-type regions, the N-type region extending from the surface of the active region toward the silicon carbide substrate, the P-type regions are spaced apart from each other in the N-type region, and extend to the surface of the active region; and
a plurality of ohmic contact layers on a surface of some of the P-type regions and set between the P-type regions and the Schottky metal layer;
wherein the plurality of P-type regions include a plurality of first P-type regions and a plurality of second P-type regions, wherein between neighboring ones of the first P-type regions there is at least one of the second P-type region, the ohmic contact layers being on the surface of the first P-type regions.