US 11,967,646 B2
Thin film transistor structure, display panel and display device
Keming Yang, Shenzhen (CN); Yizhen Xu, Shenzhen (CN); Chunhui Ren, Shenzhen (CN); Feng Jiang, Shenzhen (CN); Liu He, Shenzhen (CN); Qiang Leng, Shenzhen (CN); and Rongrong Li, Shenzhen (CN)
Assigned to HKC CORPORATION LIMITED, Shenzhen (CN)
Filed by HKC CORPORATION LIMITED, Shenzhen (CN)
Filed on Jun. 1, 2023, as Appl. No. 18/327,217.
Claims priority of application No. 202211099065.7 (CN), filed on Sep. 9, 2022.
Prior Publication US 2024/0088298 A1, Mar. 14, 2024
Int. Cl. H01L 29/786 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/78609 (2013.01) [G02F 1/136222 (2021.01); G02F 1/1368 (2013.01); H01L 29/41733 (2013.01); H01L 29/78696 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A thin film transistor structure, comprising:
a base;
a source electrode;
a drain electrode configured to connect to a pixel electrode;
a grid electrode;
an insulating layer;
a slow-release electrode;
wherein the source electrode, the drain electrode and the grid electrode are provided on the base, and a channel is formed between the source electrode and the drain electrode;
the insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel;
the slow-release electrode is provided in the insulating layer, and at least a part of the slow-release electrode is provided inside the channel; and
when the grid electrode is energized, the slow-release electrode is charged; and when the grid electrode is powered off after energized, a voltage difference between the slow-release electrode and the drain electrode is smaller than a voltage difference between the slow-release electrode and the source electrode,
the thin film transistor structure further comprises a plurality of slow-release electrodes;
wherein at least part of each slow-release electrode is provided inside the channel; and
each slow-release electrode comprises at least one spherical or hollow hemispherical structure.