CPC H01L 29/0649 (2013.01) [H01L 27/0635 (2013.01); H01L 29/41775 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a substrate;
an active device disposed over the substrate and in a first region of the substrate;
a passive device disposed over the substrate and in a second region of the substrate;
a shielding structure comprising a barrier layer and a ceiling layer, the barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer; and
a passivation layer under the barrier layer and covering a top surface of the passive device, wherein an air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.
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