US 11,967,611 B2
Multilayer structure, capacitor structure and electronic device
Hai-Dang Trinh, Hsinchu (TW); Yi Yang Wei, Hsinchu (TW); Fa-Shen Jiang, Taoyuan (TW); Bi-Shen Lee, Hsinchu (TW); and Hsun-Chung Kuang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 30, 2022, as Appl. No. 17/827,837.
Prior Publication US 2023/0387190 A1, Nov. 30, 2023
Int. Cl. H01G 4/10 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/75 (2013.01) [H01G 4/10 (2013.01); H01L 28/91 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A multilayer structure, comprising:
a first dielectric layer;
a second dielectric layer; and
an intermediate dielectric layer disposed between the first dielectric layer and the second dielectric layer, wherein a material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.