US 11,967,596 B2
Power rail and signal conducting line arrangement
Guo-Huei Wu, Hsinchu (TW); Shih-Wei Peng, Hsinchu (TW); Wei-Cheng Lin, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); Li-Chun Tien, Hsinchu (TW); and Lee-Chung Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 5, 2021, as Appl. No. 17/395,126.
Prior Publication US 2023/0045167 A1, Feb. 9, 2023
Int. Cl. H01L 27/118 (2006.01); G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H03K 17/687 (2006.01)
CPC H01L 27/11807 (2013.01) [G06F 30/31 (2020.01); G06F 30/392 (2020.01); H01L 21/76885 (2013.01); H01L 21/823871 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/11848 (2013.01); H01L 2027/11862 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11879 (2013.01); H01L 2027/11881 (2013.01); H01L 2027/11885 (2013.01); H01L 2027/11887 (2013.01); H03K 17/6872 (2013.01); H03K 17/6874 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first-voltage power rail and a second-voltage power rail, each of the first-voltage and second-voltage power rails extending in a second direction that is perpendicular to a first direction, each of the first-voltage and second-voltage power rails being in a first connection layer;
a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer, each of the first-voltage and second-voltage underlayer power rails extending in the first direction;
a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail;
a first semiconductor structure having a source region of a first-type transistor therein conductively connected to the first-voltage underlayer power rail, the first semiconductor structure underneath the first connection layer;
a second semiconductor structure having a source region of a second-type transistor therein conductively connected to the second-voltage underlayer power rail, the second semiconductor structure underneath the first connection layer;
a first signal conducting line extending in the second direction and in the first connection layer;
a gate-conductor extending in the second direction, the gate-conductor intersects either the first semiconductor structure or the second semiconductor structure at a channel region; and
a gate via-connector directly connecting the gate-conductor with the first signal conducting line.