US 11,967,594 B2
Semiconductor device structure and methods of forming the same
Shih-Cheng Chen, New Taipei (TW); Zhi-Chang Lin, Hsinchu (TW); Jung-Hung Chang, Changhua (TW); Lo Heng Chang, Hsinchu (TW); Chien Ning Yao, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/884,840.
Application 17/884,840 is a continuation of application No. 17/104,891, filed on Nov. 25, 2020, granted, now 11,450,663.
Prior Publication US 2022/0384435 A1, Dec. 1, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0922 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a stack of semiconductor layers spaced apart from and aligned with each other;
a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers;
a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature, wherein the second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers;
a dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature; and
a liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, wherein the liner is a conformal layer and is in contact with the dielectric material, and the liner is U-shaped.