US 11,967,582 B2
Multi-chip device and method of formation
Chin-Hua Wang, New Taipei (TW); Po-Chen Lai, Hsinchu County (TW); Shu-Shen Yeh, Taoyuan (TW); Tsung-Yen Lee, Hemei Township (TW); Po-Yao Lin, Zhudong Township (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu (TW)
Filed on Apr. 24, 2023, as Appl. No. 18/138,201.
Application 18/138,201 is a continuation of application No. 17/458,702, filed on Aug. 27, 2021, granted, now 11,637,087.
Prior Publication US 2023/0260963 A1, Aug. 17, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/065 (2023.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 23/3731 (2013.01); H01L 23/49822 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A multi-chip device, comprising:
a substrate;
a first material between a first sidewall of the substrate and a second sidewall of the substrate and extending from a top surface of the substrate to a bottom surface of the substrate, wherein the first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate; and
a first chip overlying the first material and overlying the substrate to overlap an interface between the first material and the substrate.