US 11,967,579 B2
Method for forming package structure with cavity substrate
Po-Hao Tsai, Taoyuan (TW); Ming-Da Cheng, Taoyuan (TW); and Mirng-Ji Lii, Sinpu Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 30, 2022, as Appl. No. 17/936,959.
Application 17/936,959 is a division of application No. 16/918,188, filed on Jul. 1, 2020, granted, now 11,462,509.
Claims priority of provisional application 62/927,182, filed on Oct. 29, 2019.
Prior Publication US 2023/0021764 A1, Jan. 26, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/52 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/42 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0652 (2013.01) [H01L 21/52 (2013.01); H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 23/42 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a package structure, comprising:
forming a plurality of conductive features in a substrate and protruding from a top surface of the substrate;
etching the top surface of the substrate to form a cavity, wherein the substrate comprises a plurality of thermal vias directly under a bottom surface of the cavity;
forming at least one first electronic device in the cavity of the substrate, wherein the first electronic device is thermally coupled to the plurality of thermal vias;
forming an encapsulating material in the cavity, so that the encapsulating material extends along sidewalls of the first electronic device and covers a surface of the first electronic device opposite the bottom surface of the cavity; and
forming an insulating layer having a redistribution layer (RDL) structure over the encapsulating material, wherein the RDL structure is electrically connected to the first electronic device, wherein a bottom surface of the insulating layer is in direct contact with a top surface of the encapsulating material and a top surface of the plurality of conductive features.