US 11,967,554 B2
Semiconductor devices and methods for manufacturing the same
Jongjin Lee, Seoul (KR); Kyungwook Kim, Hwaseong-si (KR); Rakhwan Kim, Suwon-si (KR); Seungyong Yoo, Incheon (KR); and Eun-Ji Jung, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 8, 2022, as Appl. No. 18/053,487.
Application 18/053,487 is a continuation of application No. 17/235,984, filed on Apr. 21, 2021, granted, now 11,587,867.
Claims priority of application No. 10-2020-0106870 (KR), filed on Aug. 25, 2020.
Prior Publication US 2023/0064127 A1, Mar. 2, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 29/45 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first interlayer insulating layer on the substrate;
a lower interconnection line in the first interlayer insulating layer;
an etch stop layer on the first interlayer insulating layer and the lower interconnection line;
a second interlayer insulating layer on the etch stop layer; and
an upper interconnection line in the second interlayer insulating layer, the upper interconnection line including a via portion extending through the etch stop layer and contacting the lower interconnection line,
wherein the via portion comprises a barrier pattern and a conductive pattern on the barrier pattern,
wherein the barrier pattern comprises a first portion that is between the conductive pattern and the second interlayer insulating layer and a second portion that is between the conductive pattern and the lower interconnection line,
wherein the first portion of the barrier pattern has a first nitrogen concentration, the second portion of the barrier pattern has a second nitrogen concentration, and the first nitrogen concentration is greater than the second nitrogen concentration, and
wherein the first portion of the barrier pattern has a first thickness, and the second portion of the barrier pattern has a second thickness, and the first thickness is greater than the second thickness.