US 11,967,552 B2
Methods of forming interconnect structures in semiconductor fabrication
Ming-Han Lee, Taipei (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 16, 2021, as Appl. No. 17/402,942.
Application 17/402,942 is a division of application No. 16/534,411, filed on Aug. 7, 2019, granted, now 11,094,626.
Claims priority of provisional application 62/735,520, filed on Sep. 24, 2018.
Prior Publication US 2021/0375756 A1, Dec. 2, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76852 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53252 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An interconnect structure, comprising:
a bottom via having a first thickness and disposed in a first dielectric layer;
a ruthenium-containing conductive line having a second thickness disposed over the bottom via, wherein the second thickness is less than the first thickness;
a second dielectric layer disposed over the ruthenium-containing conductive line and the first dielectric layer; and
a top via disposed in the second dielectric layer and over the ruthenium-containing conductive line,
wherein the ruthenium-containing conductive line includes a first conductive bulk layer and a first barrier layer conformally disposed over top and side surfaces of the first conductive bulk layer,
wherein the top via includes a second barrier layer and a second conductive bulk layer over the second barrier layer,
wherein the second barrier layer is disposed over the first barrier layer with a physical interface therebetween.