CPC H01L 23/5226 (2013.01) [H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76852 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53252 (2013.01)] | 20 Claims |
1. An interconnect structure, comprising:
a bottom via having a first thickness and disposed in a first dielectric layer;
a ruthenium-containing conductive line having a second thickness disposed over the bottom via, wherein the second thickness is less than the first thickness;
a second dielectric layer disposed over the ruthenium-containing conductive line and the first dielectric layer; and
a top via disposed in the second dielectric layer and over the ruthenium-containing conductive line,
wherein the ruthenium-containing conductive line includes a first conductive bulk layer and a first barrier layer conformally disposed over top and side surfaces of the first conductive bulk layer,
wherein the top via includes a second barrier layer and a second conductive bulk layer over the second barrier layer,
wherein the second barrier layer is disposed over the first barrier layer with a physical interface therebetween.
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