US 11,967,525 B2
Selective tungsten deposition at low temperatures
Yi Xu, San Jose, CA (US); Yufei Hu, Fremont, CA (US); Yu Lei, Belmont, CA (US); Kazuya Daito, Milipitas, CA (US); Da He, Santa Clara, CA (US); and Jiajie Cen, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 1, 2022, as Appl. No. 17/878,599.
Application 16/252,100 is a division of application No. 15/498,024, filed on Apr. 26, 2017, granted, now 10,256,144, issued on Apr. 9, 2019.
Application 17/878,599 is a continuation of application No. 16/917,049, filed on Jun. 30, 2020, granted, now 11,404,313.
Application 16/917,049 is a continuation in part of application No. 16/252,100, filed on Jan. 18, 2019, granted, now 10,727,119, issued on Jul. 8, 2020.
Claims priority of provisional application 63/041,096, filed on Jun. 18, 2020.
Prior Publication US 2022/0367264 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/68 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76879 (2013.01) [H01L 21/28562 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of depositing tungsten, the method comprising:
exposing a substrate to a flow of hydrogen gas; and
exposing the substrate to a flow of a tungsten precursor while exposing the substrate to the flow of hydrogen gas to deposit a tungsten layer on the substrate, the substrate maintained at a temperature of less than or equal to about 350° C., and the tungsten layer having a root mean squared roughness of less than or equal to about 1 nm.