CPC H01L 21/76879 (2013.01) [H01L 21/28562 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01)] | 15 Claims |
1. A method of depositing tungsten, the method comprising:
exposing a substrate to a flow of hydrogen gas; and
exposing the substrate to a flow of a tungsten precursor while exposing the substrate to the flow of hydrogen gas to deposit a tungsten layer on the substrate, the substrate maintained at a temperature of less than or equal to about 350° C., and the tungsten layer having a root mean squared roughness of less than or equal to about 1 nm.
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