US 11,967,522 B2
Amorphous layers for reducing copper diffusion and method forming same
Jyh-Nan Lin, Hsinchu (TW); Chia-Yu Wu, Hsinchu (TW); Kai-Shiung Hsu, Hsinchu (TW); and Ding-I Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 25, 2022, as Appl. No. 17/660,508.
Application 17/660,508 is a continuation of application No. 16/890,413, filed on Jun. 2, 2020, granted, now 11,315,829.
Claims priority of provisional application 62/891,688, filed on Aug. 26, 2019.
Prior Publication US 2022/0254679 A1, Aug. 11, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); C23F 1/12 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76829 (2013.01) [C23F 1/12 (2013.01); H01L 21/02178 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first conductive feature over a substrate;
forming an amorphous metal cap on the first conductive feature;
depositing a dielectric layer over the amorphous metal cap;
etching the dielectric layer to form an opening; and
filling the opening with a conductive material to form a second conductive feature contacting the amorphous metal cap.