US 11,967,502 B2
Methods of forming material layer, semiconductor devices, and methods of manufacturing the same
Younsoo Kim, Yongin-si (KR); Jaewoon Kim, Seoul (KR); Haeryong Kim, Seongnam-si (KR); Jinho Lee, Hwaseong-si (KR); and Tsubasa Shiratori, Tokyo (JP)
Assigned to Samsung Electronics Co., Ltd., (KR); and ADEKA CORPORATION, (JP)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 25, 2021, as Appl. No. 17/358,089.
Claims priority of application No. 10-2020-0080504 (KR), filed on Jun. 30, 2020; and application No. 10-2021-0074189 (KR), filed on Jun. 8, 2021.
Prior Publication US 2021/0407795 A1, Dec. 30, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 21/02274 (2013.01) [H01L 28/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a material layer, the method comprising:
a deposition cycle comprising:
providing an adsorption inhibitor on a substrate;
purging an excess amount of the adsorption inhibitor;
providing a metal precursor on the substrate;
purging an excess amount of the metal precursor; and
supplying a reactant to form a material layer on the substrate,
wherein the adsorption inhibitor includes a group 15 element or a group 16 element, and
wherein the reactant includes one or more selected from a group consisting of nitrogen (N2), ammonia (NH3), hydrazine (N2H4), diazene (N2H2), N2O, NO, NO2, N2 plasma, NH3 plasma, H2 plasma, and NF3.