US 11,967,498 B2
Systems and methods for depositing low-k dielectric films
Bo Xie, San Jose, CA (US); Kang S. Yim, Palo Alto, CA (US); Yijun Liu, Santa Clara, CA (US); Li-Qun Xia, Cupertino, CA (US); and Ruitong Xiong, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 29, 2020, as Appl. No. 16/914,960.
Prior Publication US 2021/0407792 A1, Dec. 30, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/32 (2006.01)
CPC H01L 21/02126 (2013.01) [C23C 16/325 (2013.01); H01L 21/02167 (2013.01); H01L 21/02274 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a silicon-and-carbon-containing material, the method comprising:
flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region of the semiconductor processing chamber, and wherein the silicon-oxygen-and-carbon-containing precursor characterized by a carbon-to-oxygen ratio that is less than 4:1;
forming a plasma within the processing region of the silicon-oxygen-and-carbon-containing precursor, wherein the plasma is formed at a frequency below 15 MHz; and
depositing a silicon-and-carbon-containing material on the substrate, wherein the silicon-and-carbon-containing material as-deposited is characterized by a dielectric constant below 3.5, wherein a deposition rate of the silicon-and-carbon-containing material is greater than 500 Å/min, and wherein the silicon-and-carbon-containing material as-deposited is characterized by a methyl incorporation less than 2.5%.