CPC H01J 37/32495 (2013.01) [C23C 16/32 (2013.01); C23C 16/4404 (2013.01); C23C 16/4405 (2013.01)] | 19 Claims |
1. A method for treating a reaction chamber, the method comprising:
providing a deposition reactor comprising the reaction chamber;
providing a metal halide source comprising a metal halide fluidly coupled to the deposition reactor;
providing a metal CVD source comprising a metal CVD precursor selected from the group consisting of one or more of organometallic compounds and aluminum CVD compounds fluidly coupled to the deposition reactor;
providing a treatment reactant source comprising a treatment reactant chemistry coupled to the deposition reactor;
providing a vacuum pump coupled to the deposition reactor; and
using a controller to:
introduce the metal halide and the metal CVD precursor to the reaction chamber to form a deposited doped metal carbide film overlying a substrate and a first residue buildup in the reaction chamber, wherein the first residue buildup results from this step of introducing the metal halide and the metal CVD precursor;
provide the treatment reactant chemistry from the treatment reactant source to the reaction space to densify the first residue buildup in the reaction space to form a densified residue buildup;
remove the substrate from the reaction chamber; and
after the step of removing, introduce the treatment reactant chemistry to the reaction chamber to perform a reaction chamber treatment to further densify the densified residue buildup,
wherein the metal halide source, the metal CVD source, and the treatment reactant source are different and separate from each other before being introduced to the reaction chamber.
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