US 11,967,486 B2
Substrate processing system including dual ion filter for downstream plasma
Andrew Stratton Bravo, Piedmont, CA (US); Chih-Hsun Hsu, Cupertino, CA (US); Serge Kosche, San Francisco, CA (US); Stephen Whitten, Danville, CA (US); Shih-Chung Kon, Fremont, CA (US); Mark Kawaguchi, San Carlos, CA (US); Himanshu Chokshi, Fremont, CA (US); Dan Zhang, Fremont, CA (US); and Gnanamani Amburose, Fremont, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/424,381
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Jan. 21, 2020, PCT No. PCT/US2020/014329
§ 371(c)(1), (2) Date Jul. 20, 2021,
PCT Pub. No. WO2020/154244, PCT Pub. Date Jul. 30, 2020.
Claims priority of provisional application 62/795,814, filed on Jan. 23, 2019.
Prior Publication US 2022/0076924 A1, Mar. 10, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32422 (2013.01) [H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32467 (2013.01); H01J 37/32174 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate processing system, comprising:
an upper chamber;
a gas delivery system to supply a gas mixture to the upper chamber;
an RF generator to generate plasma in the upper chamber;
a lower chamber including a substrate support; and
a dual ion filter arranged between the upper chamber and the lower chamber, the dual ion filter including:
an upper filter including a first plurality of through holes configured to filter ions; and
a lower filter including a second plurality of through holes configured to control plasma uniformity;
wherein a diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter; and
wherein a number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.