CPC H01J 37/32422 (2013.01) [H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32467 (2013.01); H01J 37/32174 (2013.01)] | 15 Claims |
1. A substrate processing system, comprising:
an upper chamber;
a gas delivery system to supply a gas mixture to the upper chamber;
an RF generator to generate plasma in the upper chamber;
a lower chamber including a substrate support; and
a dual ion filter arranged between the upper chamber and the lower chamber, the dual ion filter including:
an upper filter including a first plurality of through holes configured to filter ions; and
a lower filter including a second plurality of through holes configured to control plasma uniformity;
wherein a diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter; and
wherein a number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.
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