US 11,967,382 B2
Mixing normal and reverse order programming in NAND memory devices
Qing Li, Los Gatos, CA (US); Henry Chin, Fremont, CA (US); and Xiaoyu Yang, Saratoga, CA (US)
Assigned to SanDisk Technologies, LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Feb. 4, 2022, as Appl. No. 17/665,004.
Prior Publication US 2023/0253046 A1, Aug. 10, 2023
Int. Cl. G11C 7/22 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 7/227 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of operating a memory device, comprising the steps of:
preparing a memory device that includes a plurality of dies, each die including a plurality of blocks that have a plurality of word lines, the memory device including a plurality of exclusive OR (XOR) sets, each XOR set containing word lines in the same positions across the plurality of dies;
programming the word lines of the blocks of at least one of the dies in a first programming direction; and
programming the word lines of the blocks of at least one other die in a second programming direction that is opposite of the first programming direction.