CPC G06F 30/398 (2020.01) [G06F 2111/10 (2020.01); G06F 2119/02 (2020.01)] | 15 Claims |
1. A method for comprehensively evaluating reliability of a multi-chip parallel insulated gate bipolar transistor (IGBT) module, comprising:
Step (1) of establishing a gate-emitter voltage reliability model of the multi-chip parallel IGBT module, implementing a chip fatigue failure test based on the gate-emitter voltage reliability model, and selecting a gate-emitter voltage as a failure characteristic quantity;
Step (2) of establishing a transconductance reliability model of the multi-chip parallel IGBT module, implementing a bonding wire shedding failure test based on the transconductance reliability model, and selecting a transmission characteristic curve of the module as a failure characteristic quantity;
Step (3) of defining a degree of health of the IGBT module, using a Pearson correlation coefficient to characterize the degree of health, and calculating a linear correlation PPMCCC in different degrees of chip fatigue failure states and a linear correlation PPMCCB in different degrees of bonding wire shedding failure states; and
Step (4) of comprehensively evaluating the reliability of the multi-chip parallel IGBT module according to PPMCCC and PPMCCB.
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