CPC G06F 3/0653 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01)] | 20 Claims |
1. A method comprising:
determining a current value for a reference voltage for a block family of a memory device;
determining an amount of voltage shift for a memory page of the block family based on the current value for the reference voltage and a prior value for the reference voltage; and
associating the block family with a first voltage bin of a plurality of voltage bins or a second voltage bin of the plurality of voltage bins based on the determined amount of voltage shift, wherein the first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.
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