US 11,966,203 B2
System and method to adjust a kinetics model of surface reactions during plasma processing
Ankur Agarwal, Milpitas, CA (US); Chad Huard, Austin, TX (US); Yiting Zhang, Milpitas, CA (US); Haifeng Pu, Shanghai (CN); Xin Li, Shanghai (CN); Premkumar Panneerchelvam, Austin, TX (US); Fiddle Han, Shanghai (CN); and Yeurui Chen, Milpitas, CA (US)
Assigned to KLA Corporation, Milpitas, CA (US)
Filed by KLA Corporation, Milpitas, CA (US)
Filed on May 12, 2020, as Appl. No. 16/872,879.
Claims priority of provisional application 62/889,949, filed on Aug. 21, 2019.
Prior Publication US 2021/0055699 A1, Feb. 25, 2021
Int. Cl. G05B 13/04 (2006.01); G01B 11/24 (2006.01); G01B 15/04 (2006.01); G01N 21/21 (2006.01); G01N 23/201 (2018.01); G06F 17/14 (2006.01)
CPC G05B 13/042 (2013.01) [G01B 11/24 (2013.01); G01B 15/045 (2013.01); G01N 21/21 (2013.01); G01N 23/201 (2013.01); G01N 2223/054 (2013.01); G01N 2223/40 (2013.01); G06F 17/14 (2013.01)] 43 Claims
OG exemplary drawing
 
1. A system, comprising:
a metrology tool, wherein the metrology tool is configured to acquire one or more measurements of a portion of a sample; and
a controller communicatively coupled to the metrology tool, the controller including one or more processors configured to execute program instructions causing the one or more processors to:
generate a surface kinetics model output based on a surface kinetics model, wherein the surface kinetics model is run based on an initial guess of one or more parameters of the surface kinetics model;
determine an expected response of the surface kinetics model output to excitation by polarized light using one or more additional parameters of the surface kinetics model, wherein the one or more additional parameters comprise one or more parameters not used during the initial guess of one or more parameters of the surface kinetics model;
compare the determined expected response to the one or more measurements of the sample received from the metrology tool;
generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample;
adjust the one or more parameters of the surface kinetics model based on the one or more metrics to generate an adjusted surface kinetics model; and
apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing of the sample; and
generate one or more control signals configured to selectively adjust one or more characteristics of one or more process tools based on the adjusted surface kinetics model.