US 11,966,163 B2
Photomask for imprinting and manufacturing method therefor
Yong Goo Son, Daejeon (KR); Seung Heon Lee, Daejeon (KR); and Nam Seok Bae, Daejeon (KR)
Assigned to LG CHEM, LTD., Seoul (KR)
Appl. No. 16/975,068
Filed by LG CHEM, LTD., Seoul (KR)
PCT Filed Apr. 2, 2019, PCT No. PCT/KR2019/003862
§ 371(c)(1), (2) Date Aug. 21, 2020,
PCT Pub. No. WO2019/231097, PCT Pub. Date Dec. 5, 2019.
Claims priority of application No. 10-2018-0061683 (KR), filed on May 30, 2018.
Prior Publication US 2021/0088909 A1, Mar. 25, 2021
Int. Cl. G03F 7/20 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/20 (2013.01) [G03F 7/16 (2013.01); H01L 21/0274 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An imprinting photomask, comprising:
a transparent substrate;
a light blocking pattern provided on the transparent substrate; and
a dry film resist pattern provided on the light blocking pattern and corresponding to the light blocking pattern,
wherein a thickness of the light blocking pattern is 0.1 μm to 1 μm and a sum of a thickness of the light blocking pattern and a thickness of the dry film resist pattern is 20 μm to 50 μm, and
wherein a ratio of the sum of the thickness of the light blocking pattern and the thickness of the dry film resist pattern to a distance between adjacent portions of the light blocking patterns is 1 or more, and
wherein a distance between adjacent portions of the light blocking pattern is 5 μm to 30 μm.