CPC G03F 7/20 (2013.01) [G03F 7/16 (2013.01); H01L 21/0274 (2013.01)] | 12 Claims |
1. An imprinting photomask, comprising:
a transparent substrate;
a light blocking pattern provided on the transparent substrate; and
a dry film resist pattern provided on the light blocking pattern and corresponding to the light blocking pattern,
wherein a thickness of the light blocking pattern is 0.1 μm to 1 μm and a sum of a thickness of the light blocking pattern and a thickness of the dry film resist pattern is 20 μm to 50 μm, and
wherein a ratio of the sum of the thickness of the light blocking pattern and the thickness of the dry film resist pattern to a distance between adjacent portions of the light blocking patterns is 1 or more, and
wherein a distance between adjacent portions of the light blocking pattern is 5 μm to 30 μm.
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