US 11,966,162 B2
Photoresist composition and method of manufacturing a semiconductor device
Tzu-Yang Lin, Tainan (TW); Ching-Yu Chang, Yuansun Village (TW); and Chin-Hsiang Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 22, 2023, as Appl. No. 18/200,510.
Application 18/200,510 is a division of application No. 17/150,317, filed on Jan. 15, 2021, granted, now 11,703,765.
Claims priority of provisional application 62/982,719, filed on Feb. 27, 2020.
Prior Publication US 2023/0341780 A1, Oct. 26, 2023
Int. Cl. G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/36 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC G03F 7/0397 (2013.01) [G03F 7/0042 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/2004 (2013.01); G03F 7/30 (2013.01); G03F 7/32 (2013.01); G03F 7/36 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
 
1. A photoresist composition, comprising:
a photoactive compound; and
a polymer,
wherein the polymer has a polymer backbone comprising one or more groups selected from:

OG Complex Work Unit Chemistry
wherein the polymer backbone includes at least one group selected from B, C-1, or C-2,
ALG is an acid labile group, and
X is a linking group.