CPC C30B 29/406 (2013.01) [C30B 25/02 (2013.01); C30B 33/08 (2013.01)] | 18 Claims |
1. Two-dimensional crystal wafer of group 13 or III element nitride, delimited by a face of orientation N, an opposite face of orientation E according to the group 13 or III element, E being chosen preferably from Ga, In, Al or a combination of these elements:
wherein:
the variation of the crystalline off-cut angle along the largest dimension of said wafer is less than 5×10−3°/mm, and
its geometric curvature or deformation of its faces has a deflection less in absolute value than 10−3 mm/mm of the largest dimension of said wafer.
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