CPC C23C 16/45557 (2013.01) [C23C 16/34 (2013.01); C23C 16/45527 (2013.01); H01L 21/02186 (2013.01); H01L 21/0228 (2013.01)] | 20 Claims |
1. A substrate processing method using a substrate processing apparatus which comprises a chamber configured to form a processing space for substrate processing, a substrate support installed in the chamber to support a substrate, a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space and comprising a valve for controlling a pressure,
wherein the substrate processing method does not require impurity concentration detection and comprises a pressure changing operation repeated at least one time,
wherein the pressure changing operation comprises:
a pressurizing operation of increasing an internal pressure of the chamber from a first pressure to a second pressure higher than the atmospheric pressure, by injecting a process gas into the processing space; and
a depressurizing operation of decreasing the internal pressure of the chamber from the second pressure higher than the atmospheric pressure to a third pressure,
wherein a process gas-supplying flow rate in the depressurizing operation is lower than a process gas-supplying flow rate in the pressurizing operation, and
the third pressure is equal to or less than the atmospheric pressure.
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