US 11,965,244 B2
Substrate processing method, substrate processing apparatus using the same, and semiconductor device manufacturing method
Kyung Park, Seoul (KR); Hyeon Beom Gwon, Seoul (KR); and Dae Seong Lee, Dongducheon-si (KR)
Assigned to WONIK IPS CO., LTD, Pyeongtaek-si (KR)
Filed by WONIK IPS CO., LTD., Pyeongtaek-si (KR)
Filed on Aug. 25, 2021, as Appl. No. 17/411,939.
Claims priority of application No. 10-2020-0107575 (KR), filed on Aug. 26, 2020.
Prior Publication US 2022/0064796 A1, Mar. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45557 (2013.01) [C23C 16/34 (2013.01); C23C 16/45527 (2013.01); H01L 21/02186 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing method using a substrate processing apparatus which comprises a chamber configured to form a processing space for substrate processing, a substrate support installed in the chamber to support a substrate, a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space and comprising a valve for controlling a pressure,
wherein the substrate processing method does not require impurity concentration detection and comprises a pressure changing operation repeated at least one time,
wherein the pressure changing operation comprises:
a pressurizing operation of increasing an internal pressure of the chamber from a first pressure to a second pressure higher than the atmospheric pressure, by injecting a process gas into the processing space; and
a depressurizing operation of decreasing the internal pressure of the chamber from the second pressure higher than the atmospheric pressure to a third pressure,
wherein a process gas-supplying flow rate in the depressurizing operation is lower than a process gas-supplying flow rate in the pressurizing operation, and
the third pressure is equal to or less than the atmospheric pressure.