US 11,956,973 B2
Magnetoresistive random access memory and method for fabricating the same
Hung-Chan Lin, Tainan (TW); and Yu-Ping Wang, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 7, 2021, as Appl. No. 17/369,917.
Claims priority of application No. 202110613576.5 (CN), filed on Jun. 2, 2021.
Prior Publication US 2022/0392955 A1, Dec. 8, 2022
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/22 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a magnetic tunneling junction (MTJ) on a substrate;
a first spin orbit torque (SOT) layer on a top surface of the MTJ;
a passivation layer around the MTJ; and
a second SOT layer on the first SOT layer and the passivation layer.