US 11,948,967 B2
Polysilicon resistor
Ding Li, Shenzhen (CN); Shuai Du, Chengdu (CN); and Yixing Chu, Chengdu (CN)
Assigned to HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed by HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed on Oct. 22, 2020, as Appl. No. 17/077,329.
Application 17/077,329 is a continuation of application No. PCT/CN2018/115137, filed on Nov. 13, 2018.
Claims priority of application No. 201810380599.4 (CN), filed on Apr. 25, 2018.
Prior Publication US 2021/0043720 A1, Feb. 11, 2021
Int. Cl. H01C 7/00 (2006.01); H01C 1/14 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/24 (2013.01) [H01C 1/14 (2013.01); H01C 7/006 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A polysilicon resistor, comprising:
a polysilicon layer;
a substrate layer; and
a voltage module to transmit a voltage on the polysilicon layer to the substrate layer, wherein the voltage module comprises a buffer, wherein an input of the buffer is connected to the polysilicon layer and an output of the buffer is connected to the substrate layer.