US 11,948,838 B2
Semiconductor chip suitable for 2.5D and 3D packaging integration and methods of forming the same
Deep C. Dumka, Richardson, TX (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by Qorvo US, Inc., Greensboro, NC (US)
Filed on Feb. 14, 2023, as Appl. No. 18/168,753.
Prior Publication US 2023/0197517 A1, Jun. 22, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 23/48 (2006.01); H01L 23/66 (2006.01); H01L 25/065 (2023.01); H01L 29/06 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 23/481 (2013.01); H01L 23/66 (2013.01); H01L 25/0657 (2013.01); H01L 29/0649 (2013.01); H01L 2223/6683 (2013.01)] 23 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first semiconductor chip having a first substrate, a first metal layer, and a plurality of first component portions, wherein:
the first substrate includes a first substrate base and a plurality of first protrusions at a backside of the first substrate, wherein each of the plurality of first protrusions with a same height protrudes from a bottom surface of the first substrate base, and at least one first via hole extends vertically through one of the plurality of first protrusions and the first substrate base;
the first metal layer selectively covers exposed surfaces at the backside of the first substrate and fully covers inner surfaces of the at least one first via hole; and
the plurality of first component portions is over a top surface of the first substrate base and a certain one of the plurality of first component portions is electrically coupled to a portion of the first metal layer at a top of the at least one first via hole; and
a second semiconductor chip, which is stacked underneath the first semiconductor chip, having a second substrate and a plurality of second component portions over a top surface of the second substrate, wherein each of the plurality of first protrusions protrudes toward a corresponding second component portion, such that the certain one of the plurality of first component portions is electrically coupled to a certain one of the plurality of second component portions by the first metal layer.