US 11,948,796 B2
Selective methods for fabricating devices and structures
Yi-Chiau Huang, Fremont, CA (US); Chen-Ying Wu, Santa Clara, CA (US); Abhishek Dube, Fremont, CA (US); Chia Cheng Chin, Fremont, CA (US); and Saurabh Chopra, Santa Clara, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Appl. No. 17/616,131
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Jun. 10, 2020, PCT No. PCT/US2020/037052
§ 371(c)(1), (2) Date Dec. 2, 2021,
PCT Pub. No. WO2020/252065, PCT Pub. Date Dec. 17, 2020.
Claims priority of provisional application 62/860,654, filed on Jun. 12, 2019.
Prior Publication US 2022/0310390 A1, Sep. 29, 2022
Int. Cl. C30B 25/10 (2006.01); C23C 16/06 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/02636 (2013.01) [C23C 16/06 (2013.01); C30B 25/18 (2013.01); C30B 29/52 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/823418 (2013.01); H01L 29/0847 (2013.01); H01L 21/02381 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/823431 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate in a process chamber, comprising:
exposing the substrate having one or more fins into a process volume of the process chamber;
introducing precursor gases into the process chamber;
growing an epitaxial layer on top surfaces of each of the one or more fins; and
etching the epitaxial layer on sidewall surfaces of each of the one or more fins, wherein:
growing the epitaxial layer and etching the epitaxial layer occur simultaneously,
growth of the epitaxial layer on the top surfaces occurs at a greater rate than etch, and
etch of the epitaxial layer on the sidewall surfaces occurs at a greater rate than growth.