US 11,947,269 B2
Method and apparatus to determine a patterning process parameter
Anagnostis Tsiatmas, Eindhoven (NL); Paul Christiaan Hinnen, Veldhoven (NL); Elliott Gerard McNamara, Eindhoven (NL); Thomas Theeuwes, Veldhoven (NL); Maria Isabel De La Fuente Valentin, Eindhoven (NL); Mir Homayoun Shahrjerdy, Eindhoven (NL); Arie Jeffrey Den Boef, Waalre (NL); and Shu-jin Wang, Veldhoven (NL)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
Filed on Oct. 8, 2021, as Appl. No. 17/497,087.
Application 17/497,087 is a continuation of application No. 16/178,638, filed on Nov. 2, 2018, granted, now 11,143,972.
Claims priority of application No. 17203287 (EP), filed on Nov. 23, 2017.
Prior Publication US 2022/0066330 A1, Mar. 3, 2022
Int. Cl. G03F 7/00 (2006.01); G06T 7/00 (2017.01); G03F 7/20 (2006.01)
CPC G03F 7/70633 (2013.01) [G03F 7/70625 (2013.01); G03F 7/70683 (2013.01); G06T 7/0006 (2013.01); G03F 7/20 (2013.01); G06T 2207/30148 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A patterning device pattern comprising:
a device pattern; and
a metrology target pattern separate from the device pattern for formation of a metrology target for setup, monitoring or correction of a measurement recipe used to determine a patterning process parameter that measures change in a physical configuration of a structure based on a detected representation of radiation redirected by the structure, wherein the structure has geometric symmetry at a nominal physical configuration and wherein a different physical configuration of the structure than the nominal physical configuration causes an asymmetric optical characteristic distribution, the metrology target pattern comprising patterns corresponding to each of a plurality of target structures to be formed on the substrate using the patterns, wherein each target structure has an intentional different physical configuration of the respective target structure than the respective nominal physical configuration of the respective target structure, wherein each target structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different target structure physical configuration of the respective target structure causes an asymmetric optical characteristic distribution and wherein the patterning process parameter measures change in the target structure physical configuration from the intentional and/or nominal target structure physical configuration and wherein each target structure is configured to enable a value of the patterning process parameter to be determined from that target structure without use of radiation from another of the target structures.