US 11,944,023 B2
Non-volatile resistive random access memory and a manufacturing method
Ananthakrishnan Srinivasan, Johannesburg (ZA); Sreedevi Vallabhapurapu, Johannesburg (ZA); and Vijaya Srinivasu Vallabhapurapu, Johannesburg (ZA)
Assigned to University of South Africa, Pretoria (ZA)
Appl. No. 17/296,826
Filed by University of South Africa, Pretoria (ZA)
PCT Filed Nov. 26, 2019, PCT No. PCT/IB2019/060168
§ 371(c)(1), (2) Date May 25, 2021,
PCT Pub. No. WO2020/109991, PCT Pub. Date Jun. 4, 2020.
Claims priority of application No. 2018/08000 (ZA), filed on Nov. 27, 2018.
Prior Publication US 2021/0399218 A1, Dec. 23, 2021
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/22 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A non-volatile resistive random access memory (ReRAM) which includes:
a first electrode;
a second electrode; and
a resistive switching/active layer which is located between the first and second electrodes, wherein the switching layer contains
chitosan, and
aluminium doped/incorporated zinc oxide.