CPC H10N 70/8833 (2023.02) [H10B 63/22 (2023.02); H10N 70/021 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02)] | 19 Claims |
1. A non-volatile resistive random access memory (ReRAM) which includes:
a first electrode;
a second electrode; and
a resistive switching/active layer which is located between the first and second electrodes, wherein the switching layer contains
chitosan, and
aluminium doped/incorporated zinc oxide.
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