US 11,944,015 B2
Magnetic memory using spin-orbit torque
Han-Jong Chia, Hsinchu (TW)
Assigned to EVERSPIN TECHNOLOGIES, INC., Chandler, AZ (US)
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
Filed on Apr. 18, 2022, as Appl. No. 17/659,506.
Application 17/659,506 is a continuation of application No. 17/165,092, filed on Feb. 2, 2021, granted, now 11,342,497.
Application 17/165,092 is a continuation of application No. 16/806,533, filed on Mar. 2, 2020, granted, now 10,937,948, issued on Mar. 2, 2021.
Application 16/806,533 is a continuation of application No. 16/193,660, filed on Nov. 16, 2018, granted, now 10,622,547, issued on Apr. 14, 2020.
Claims priority of provisional application 62/593,343, filed on Dec. 1, 2017.
Prior Publication US 2022/0254991 A1, Aug. 11, 2022
Int. Cl. G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetoresistive device, comprising:
a first electrode;
a reference layer having a fixed magnetic state;
a free layer having a magnetic state, where the magnetic state of the free layer stores a first value when in a first magnetic state and stores a second value when in a second magnetic state;
a dielectric layer between the free layer and the reference layer;
a first spin orbit torque (SOT) segment, wherein electric current through the first SOT segment generates spin current; and
a second SOT segment, wherein electric current through the second SOT segment generates spin current;
wherein the first SOT segment and the second SOT segment are at different radial positions of the magnetoresistive device, and
wherein at least one of the first SOT segment or the second SOT segment extends to the first electrode or extends up at least a portion of a sidewall of the first electrode.