US 11,944,014 B2
Magnetic memory devices
Sanghwan Park, Suwon-si (KR); Jaehoon Kim, Seoul (KR); Yongsung Park, Suwon-si (KR); Hyeonwoo Seo, Suwon-si (KR); Sechung Oh, Yongin-si (KR); and Hyun Cho, Changwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 25, 2021, as Appl. No. 17/358,435.
Claims priority of application No. 10-2020-0153076 (KR), filed on Nov. 16, 2020.
Prior Publication US 2022/0158085 A1, May 19, 2022
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising a magnetic tunnel junction, wherein the magnetic tunnel junction comprises:
a fixed layer;
a polarization enhancement structure on the fixed layer;
a tunnel barrier layer on the polarization enhancement structure; and
a free layer on the tunnel barrier layer,
wherein the polarization enhancement structure comprises a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other, with a first and second of the plurality of polarization enhancement layers both directly contacting a spacer layer of the at least one spacer layer therebetween,
wherein each of the plurality of polarization enhancement layers comprises a ferromagnetic material and each of at least one spacer layers comprises a ferromagnetic material and a non-magnetic material,
wherein a thickness of each of the plurality of polarization enhancement layers is from about 5 Å to about 20 Å, and
wherein a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.