CPC H10K 19/202 (2023.02) [H10K 10/50 (2023.02); H10K 85/761 (2023.02)] | 29 Claims |
1. A cross-wire memory apparatus, comprising:
(a) a first plurality of nucleic acid-based nanowires;
(b) a second plurality of nucleic acid-based nanowires; wherein each nanowire in the first plurality of nucleic acid-based nanowires crossing over a nanowire in the second plurality of nucleic acid-based nanowires; and
(c) a plurality of conductive memory elements, each said memory element connecting a first nanowire with a second nanowire; wherein each said memory element having a controlled conductance to encode a data bit.
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