US 11,943,929 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Hajime Kimura, Atsugi (JP); Takanori Matsuzaki, Atsugi (JP); Kiyoshi Kato, Atsugi (JP); and Satoru Okamoto, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Mar. 31, 2023, as Appl. No. 18/129,120.
Application 16/786,273 is a division of application No. 16/004,890, filed on Jun. 11, 2018, granted, now 10,593,693, issued on Mar. 17, 2020.
Application 18/129,120 is a continuation of application No. 17/319,389, filed on May 13, 2021, granted, now 11,626,422.
Application 17/319,389 is a continuation of application No. 16/786,273, filed on Feb. 10, 2020, granted, now 11,011,542, issued on May 18, 2021.
Claims priority of application No. 2017-119073 (JP), filed on Jun. 16, 2017; and application No. 2017-132740 (JP), filed on Jul. 6, 2017.
Prior Publication US 2023/0309308 A1, Sep. 28, 2023
Int. Cl. H10B 43/27 (2023.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H01L 29/24 (2013.01); H01L 29/513 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductor over a substrate;
a first insulator over the first conductor;
a second conductor over the first insulator; and
a third conductor, a second insulator, and an oxide which are embedded in a first opening in the first insulator and a second opening in the second conductor,
wherein the oxide comprises indium and zinc,
wherein the third conductor, the second insulator, and the oxide extend in a direction intersecting a top surface of the substrate,
wherein the oxide surrounds the third conductor with the second insulator provided therebetween, and
wherein a bottom surface of the oxide is in contact with a top surface of the first conductor.