CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H01L 29/24 (2013.01); H01L 29/513 (2013.01)] | 14 Claims |
1. A semiconductor device comprising:
a first conductor over a substrate;
a first insulator over the first conductor;
a second conductor over the first insulator; and
a third conductor, a second insulator, and an oxide which are embedded in a first opening in the first insulator and a second opening in the second conductor,
wherein the oxide comprises indium and zinc,
wherein the third conductor, the second insulator, and the oxide extend in a direction intersecting a top surface of the substrate,
wherein the oxide surrounds the third conductor with the second insulator provided therebetween, and
wherein a bottom surface of the oxide is in contact with a top surface of the first conductor.
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