US 11,943,926 B2
Semiconductor device and data storage system including the same
Wonseok Cho, Suwon-si (KR); and Seulbi Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 16, 2021, as Appl. No. 17/377,869.
Claims priority of application No. 10-2020-0130128 (KR), filed on Oct. 8, 2020.
Prior Publication US 2022/0115397 A1, Apr. 14, 2022
Int. Cl. H10B 43/30 (2023.01); H01L 21/762 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H01L 23/00 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 21/76232 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 41/27 (2023.02); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a peripheral circuit structure including a first substrate and circuit elements on the first substrate;
a second substrate on the peripheral circuit structure;
a first horizontal conductive layer on the second substrate;
a second horizontal conductive layer on the first horizontal conductive layer;
a stack structure including a plurality of gate electrodes, stacked to be spaced apart from each other in a direction perpendicular to an upper surface of the second horizontal conductive layer, and a plurality of interlayer insulating layers stacked alternately with the plurality of gate electrodes;
a channel structure including a channel layer and penetrating through the first horizontal conductive layer, the second horizontal conductive layer, and the stack structure; and
a separation insulating layer penetrating through the first horizontal conductive layer, the second horizontal conductive layer, and the stack structure and extending in a first direction, the separation insulating layer including a first portion having a continuously decreasing width, and a second portion penetrating through the first and second horizontal conductive layers and having a width greater than a minimum width of the first portion, a sidewall of the second portion having a first slope from a bottom surface, the first slope intersecting a second slope which extends to a level of the first portion and the second portion intersecting, an intersection of the first slope and the second slope being less than 180 degrees.