US 11,943,914 B2
Method of manufacturing memory structure having a hexagonal shaped bit line contact disposed on a source/drain region
Yu-Ying Lin, Tainan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 20, 2023, as Appl. No. 18/186,935.
Application 18/186,935 is a division of application No. 17/451,157, filed on Oct. 18, 2021, granted, now 11,641,735.
Prior Publication US 2023/0232617 A1, Jul. 20, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/485 (2023.02) [H10B 12/033 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory structure, comprising:
forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, wherein the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures;
performing a dry etching process to form a trench between the first gate structure and the second gate structure;
performing a wet etching process to expand the trench to form an expanded trench, wherein the expanded trench has a hexagonal shaped cross section; and
forming a bit line contact in the expanded trench.