US 11,943,910 B2
Semiconductor device and manufacturing method thereof
Chung-Lin Huang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Dec. 30, 2021, as Appl. No. 17/646,482.
Prior Publication US 2023/0217642 A1, Jul. 6, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/053 (2023.02) [H10B 12/34 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, comprising:
forming an opening in a substrate;
implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening, wherein implanting the dopant in the substrate from the sidewall of the opening comprises implanting the dopant at a bottom portion of the opening;
after implanting the dopant in the substrate from the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure; and
forming a passing word line in the first dielectric structure.