US 11,943,552 B2
Depth sensor and image detecting system including the same
Jungwook Lim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 13, 2022, as Appl. No. 17/719,649.
Claims priority of application No. 10-2021-0086523 (KR), filed on Jul. 1, 2021.
Prior Publication US 2023/0007200 A1, Jan. 5, 2023
Int. Cl. H04N 25/705 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/705 (2023.01) [H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A depth sensor comprising:
a pixel configured to generate an image signal based on a sensed light, the pixel comprising:
a first photo transistor configured to integrate first charges based on a first photo gate signal that toggles during an integration period;
a second photo transistor configured to integrate second charges based on a second photo gate signal that toggles during the integration period;
a first transfer transistor connected with the first photo transistor, and configured to transfer the first charges to a first floating diffusion node based on a first transfer gate signal;
a second transfer transistor connected with the second photo transistor, and configured to transfer the second charges to a second floating diffusion node based on the first transfer gate signal; and
a switch connected to a node to which the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor are connected, and configured to control a voltage to be applied to the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor.