US 11,943,542 B2
Imaging devices with single-photon avalanche diodes having sub-exposures for high dynamic range
Salvatore Gnecchi, Cork (IE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Sep. 23, 2021, as Appl. No. 17/448,577.
Application 17/448,577 is a continuation of application No. 16/670,740, filed on Oct. 31, 2019, granted, now 11,159,738.
Claims priority of provisional application 62/905,787, filed on Sep. 25, 2019.
Prior Publication US 2022/0006942 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H04N 5/00 (2011.01); G01S 7/48 (2006.01); G01S 7/4863 (2020.01); G01S 17/89 (2020.01); G06T 7/00 (2017.01); G06T 7/521 (2017.01); H04N 23/56 (2023.01); H04N 23/741 (2023.01)
CPC H04N 23/741 (2023.01) [G01S 7/4863 (2013.01); G01S 17/89 (2013.01); G06T 7/521 (2017.01); H04N 23/56 (2023.01); G06T 2207/10028 (2013.01); G06T 2207/20208 (2013.01); G06T 2207/20212 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An imaging system comprising:
a semiconductor device comprising a plurality of single-photon avalanche diodes; and
control circuitry configured to:
set a bias voltage for the plurality of single-photon avalanche diodes to a first voltage level during a first sub-exposure;
expose the plurality of single-photon avalanche diodes to light pulses during the first sub-exposure;
set the bias voltage for the plurality of single-photon avalanche diodes to a second voltage level during a second sub-exposure, wherein the second voltage level is different than the first voltage level; and
expose the plurality of single-photon avalanche diodes to additional light pulses during the second sub-exposure; and
image processing circuitry configured to generate a depth map based on data from the first and second sub-exposures.