US 11,942,972 B2
Radio frequency switch control circuitry
Sachin Nagarajan, Irvine, CA (US); Abhishekh Devaraj, Irvine, CA (US); Florinel G. Balteanu, Irvine, CA (US); and Yunyoung Choi, Irvine, CA (US)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by Skyworks Solutions, Inc., Irvine, CA (US)
Filed on May 18, 2022, as Appl. No. 17/663,889.
Claims priority of provisional application 63/202,867, filed on Jun. 28, 2021.
Prior Publication US 2022/0416816 A1, Dec. 29, 2022
Int. Cl. H04B 1/00 (2006.01); G05F 3/16 (2006.01); H02M 1/00 (2006.01); H02M 3/07 (2006.01); H03K 3/03 (2006.01); H04B 1/44 (2006.01)
CPC H04B 1/006 (2013.01) [G05F 3/16 (2013.01); H02M 1/0041 (2021.05); H02M 3/07 (2013.01); H03K 3/0315 (2013.01); H04B 1/44 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A mobile device comprising:
a power management system including a positive charge pump configured to generate a positive charge pump voltage, a negative charge pump configured to generate a negative charge pump voltage, and a voltage regulator configured to generate a regulated voltage; and
a front end system including a radio frequency switch controlled by a first switch control signal, and a level shifter operable to level shift a first switch enable signal to generate the first switch control signal at a first output, the level shifter including a first level-shifting n-type transistor and a first cascode n-type transistor in series between the negative charge pump voltage and the first output, a first level-shifting p-type transistor and a first cascode p-type transistor in series between the positive charge pump voltage and the first output, and a second cascode p-type transistor between the regulated voltage and a gate of the first level-shifting n-type transistor and controlled by the first switch enable signal.