US 11,942,761 B2
Optical semiconductor integrated element
Yoshimichi Morita, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/285,395
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jan. 9, 2019, PCT No. PCT/JP2019/000277
§ 371(c)(1), (2) Date Apr. 14, 2021,
PCT Pub. No. WO2020/144752, PCT Pub. Date Jul. 16, 2020.
Prior Publication US 2022/0006262 A1, Jan. 6, 2022
Int. Cl. H01S 5/10 (2021.01); H01S 5/026 (2006.01); H01S 5/12 (2021.01); H01S 5/16 (2006.01)
CPC H01S 5/1014 (2013.01) [H01S 5/026 (2013.01); H01S 5/0264 (2013.01); H01S 5/12 (2013.01); H01S 5/16 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An optical semiconductor integrated element, comprising:
a laser diode section provided on a surface of a substrate;
a spot-size converter section provided on a surface of the substrate, said spot-size converter section being composed of: a core layer which causes laser light emitted from the laser diode section to propagate therein and whose both sides are tapered down in a propagation direction of the laser light to form a tapered shape; a front-surface side cladding layer which covers a front surface side of the core layer; a back-surface side cladding layer which covers a back surface side of the core layer; first cladding layers provided on the both sides of the core layer; and a second cladding layer provided on respective surfaces of the front-surface side cladding layer and the first cladding layers;
a window region provided on a surface of the substrate that is placed on a front-end side of the core layer of the spot-size converter section; and
a monitor section provided on a surface of the window region;
wherein a refractive index of the first cladding layers is lower than a refractive index of the second cladding layer.