US 11,942,759 B2
Engineered current-density profile diode laser
Paul O. Leisher, Dublin, CA (US); Robert J. Deri, Pleasanton, CA (US); and Susant K. Patra, Brentwood, CA (US)
Assigned to LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, Livermore, CA (US)
Filed by LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, Livermore, CA (US)
Filed on Jan. 31, 2023, as Appl. No. 18/104,064.
Application 18/104,064 is a continuation of application No. 17/041,256, granted, now 11,658,460, previously published as PCT/US2019/024134, filed on Mar. 26, 2019.
Claims priority of provisional application 62/648,286, filed on Mar. 26, 2018.
Prior Publication US 2023/0178960 A1, Jun. 8, 2023
Int. Cl. H01S 5/042 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/0421 (2013.01) [H01S 5/042 (2013.01); H01S 5/343 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An engineered current-density profile diode laser, comprising:
a first portion of semiconductor material;
a quantum well active region on said first portion of semiconductor material;
a second portion of said semiconductor material on said quantum well active region;
a metal contact on said second portion of said semiconductor material; and
a plurality of current vias located between said quantum well active region and said metal contact,
wherein said current vias provide, in use, a desired current density per longitudinal direction of said diode laser;
said current density increasing from a zero value to a first value at a first position along said longitudinal direction,
said current density increasing from said first value to a second value at a second position along said longitudinal direction,
said current density decreasing from said second value to a third value, lower than the first value, at a third position along said longitudinal direction, and
said current density increasing from said third value to said first value at a fourth position along said longitudinal direction.