US 11,942,581 B2
Semiconductor device with transmissive layer and manufacturing method thereof
David Clark, Ipswich (GB); and Curtis Zwenger, Chandler, AZ (US)
Assigned to AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Sep. 2, 2022, as Appl. No. 17/902,035.
Application 17/902,035 is a continuation of application No. 17/026,752, filed on Sep. 21, 2020, granted, now 11,437,552.
Application 17/026,752 is a continuation of application No. 16/686,516, filed on Nov. 18, 2019, granted, now 10,784,422, issued on Sep. 22, 2020.
Application 16/686,516 is a continuation of application No. 15/947,245, filed on Apr. 6, 2018, granted, now 10,490,716, issued on Nov. 26, 2019.
Application 15/947,245 is a continuation of application No. 15/256,970, filed on Sep. 6, 2016, granted, now 9,960,328, issued on May 1, 2018.
Prior Publication US 2023/0074157 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/58 (2010.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/58 (2013.01) [H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 24/00 (2013.01); H01L 33/44 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 33/62 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a transmissive layer comprising a transmissive layer first side and a transmissive layer second side opposite the transmissive layer first side, wherein the transmissive layer permits passage of radiation between the transmissive layer first side and the transmissive layer second side;
a first redistribution structure comprising a first redistribution structure first side, a first redistribution structure second side opposite the first redistribution structure first side, and a first redistribution structure opening that extends through the first redistribution structure first side to the first redistribution structure second side and exposes a portion of the transmissive layer first side, wherein the first redistribution structure first side comprises first conductive pads; and
a first component comprising a first component first side, a first component second side opposite the first component first side, and a first radiation circuit, wherein the first component second side is coupled to the first conductive pads of the first redistribution structure first side, and wherein the first radiation circuit is vertically aligned with the first redistribution structure opening to permit radiation to pass between the first radiation circuit and a portion of the transmissive layer via the first redistribution structure opening.