US 11,942,561 B2
Shingled solar cell module
Ratson Morad, Palo Alto, CA (US); Gilad Almogy, Palo Alto, CA (US); Itai Suez, Santa Cruz, CA (US); Jean Hummel, San Carlos, CA (US); Nathan Beckett, Oakland, CA (US); Yafu Lin, San Jose, CA (US); John Gannon, Oakland, CA (US); Michael J. Starkey, Santa Clara, CA (US); Robert Stuart, Arcata, CA (US); Tamir Lance, Los Gatos, CA (US); and Dan Maydan, Los Altos Hills, CA (US)
Assigned to MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed by MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed on Jul. 20, 2022, as Appl. No. 17/869,513.
Application 17/869,513 is a continuation of application No. 16/163,377, filed on Oct. 17, 2018, granted, now 11,482,639.
Application 16/163,377 is a continuation of application No. 16/020,241, filed on Jun. 27, 2018, granted, now 11,038,072, issued on Jun. 15, 2021.
Application 16/020,241 is a continuation of application No. 15/359,326, filed on Nov. 22, 2016, granted, now 10,090,430, issued on Oct. 2, 2018.
Application 15/359,326 is a continuation of application No. PCT/US2015/032472, filed on May 26, 2015.
Application PCT/US2015/032472 is a continuation in part of application No. 14/674,983, filed on Mar. 31, 2015, granted, now 9,947,820, issued on Apr. 17, 2018.
Application 14/674,983 is a continuation in part of application No. 14/605,695, filed on Jan. 26, 2015, granted, now 9,484,484, issued on Nov. 1, 2016.
Application 14/605,695 is a continuation in part of application No. 14/594,439, filed on Jan. 12, 2015, granted, now 9,397,252, issued on Jul. 19, 2016.
Application 14/594,439 is a continuation in part of application No. 14/585,917, filed on Dec. 30, 2014, abandoned.
Application 14/585,917 is a continuation in part of application No. 14/586,025, filed on Dec. 30, 2014, abandoned.
Application 14/586,025 is a continuation in part of application No. 14/577,593, filed on Dec. 19, 2014, granted, now 9,356,184, issued on May 31, 2016.
Application 14/577,593 is a continuation in part of application No. 14/572,206, filed on Dec. 16, 2014, granted, now 9,401,451, issued on Jul. 26, 2016.
Application 14/572,206 is a continuation in part of application No. 14/566,278, filed on Dec. 10, 2014, abandoned.
Application 14/566,278 is a continuation in part of application No. 14/565,820, filed on Dec. 10, 2014, abandoned.
Application 14/565,820 is a continuation in part of application No. 14/560,577, filed on Dec. 4, 2014, granted, now 9,876,132, issued on Jan. 23, 2018.
Application 14/560,577 is a continuation in part of application No. 14/552,761, filed on Nov. 25, 2014, abandoned.
Application 14/552,761 is a continuation in part of application No. 14/550,676, filed on Nov. 21, 2014, abandoned.
Application 14/550,676 is a continuation in part of application No. 29/509,586, filed on Nov. 19, 2014, granted, now D750556.
Application 29/509,586 is a continuation in part of application No. 29/509,588, filed on Nov. 19, 2014, granted, now D767484.
Application 29/509,588 is a continuation in part of application No. 14/548,081, filed on Nov. 19, 2014, abandoned.
Application 14/548,081 is a continuation in part of application No. 14/543,580, filed on Nov. 17, 2014, granted, now 9,882,077, issued on Jan. 30, 2018.
Application 14/543,580 is a continuation in part of application No. 14/539,546, filed on Nov. 12, 2014, abandoned.
Application 14/539,546 is a continuation in part of application No. 14/536,486, filed on Nov. 7, 2014, abandoned.
Application 14/536,486 is a continuation in part of application No. 29/508,323, filed on Nov. 5, 2014, abandoned.
Application 29/508,323 is a continuation in part of application No. 14/532,293, filed on Nov. 4, 2014, abandoned.
Application 14/532,293 is a continuation in part of application No. 14/530,405, filed on Oct. 31, 2014, granted, now 9,780,253, issued on Oct. 3, 2017.
Application 14/530,405 is a continuation in part of application No. 29/506,755, filed on Oct. 20, 2014, abandoned.
Application 29/506,755 is a continuation in part of application No. 29/506,415, filed on Oct. 15, 2014, abandoned.
Claims priority of provisional application 62/150,426, filed on Apr. 21, 2015.
Claims priority of provisional application 62/134,176, filed on Mar. 17, 2015.
Claims priority of provisional application 62/113,250, filed on Feb. 6, 2015.
Claims priority of provisional application 62/111,757, filed on Feb. 4, 2015.
Claims priority of provisional application 62/103,816, filed on Jan. 15, 2015.
Claims priority of provisional application 62/082,904, filed on Nov. 21, 2014.
Claims priority of provisional application 62/081,200, filed on Nov. 18, 2014.
Claims priority of provisional application 62/064,834, filed on Oct. 16, 2014.
Claims priority of provisional application 62/064,260, filed on Oct. 15, 2014.
Claims priority of provisional application 62/048,858, filed on Sep. 11, 2014.
Claims priority of provisional application 62/042,615, filed on Aug. 27, 2014.
Claims priority of provisional application 62/036,215, filed on Aug. 12, 2014.
Claims priority of provisional application 62/035,624, filed on Aug. 11, 2014.
Claims priority of provisional application 62/003,223, filed on May 27, 2014.
Prior Publication US 2022/0367735 A1, Nov. 17, 2022
Int. Cl. H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/042 (2014.01); H01L 31/044 (2014.01); H01L 31/048 (2014.01); H01L 31/05 (2014.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H02J 3/38 (2006.01); H02J 3/46 (2006.01); H02J 5/00 (2016.01); H02S 40/32 (2014.01); H02S 40/34 (2014.01)
CPC H01L 31/02008 (2013.01) [H01L 31/0201 (2013.01); H01L 31/022441 (2013.01); H01L 31/035281 (2013.01); H01L 31/042 (2013.01); H01L 31/044 (2014.12); H01L 31/048 (2013.01); H01L 31/0508 (2013.01); H01L 31/0512 (2013.01); H01L 31/0747 (2013.01); H01L 31/186 (2013.01); H01L 31/1876 (2013.01); H01L 31/188 (2013.01); H02J 3/381 (2013.01); H02J 3/46 (2013.01); H02J 5/00 (2013.01); H02S 40/32 (2014.12); H02S 40/34 (2014.12); H02J 2300/24 (2020.01); Y02E 10/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a solar cell comprising:
providing a monocrystalline silicon wafer having a front surface, a rear surface and a thickness between the front and rear surfaces;
forming trenches in the front surface of the silicon wafer, each trench having a depth, a length, a width, and walls, the depth of each trench not greater than the thickness of the silicon wafer;
depositing a first amorphous silicon layer on the front surface of the silicon wafer;
depositing a second amorphous silicon layer on the rear surface of the silicon wafer;
depositing a first transparent conductive oxide (TCO) onto the first amorphous silicon layer forming a front TCO layer and into the trenches formed in the silicon wafer such that the first TCO coats and passivates the walls of each trench;
depositing a second TCO onto the second amorphous silicon layer forming a rear TCO layer;
forming conductive grid lines on the front and rear TCO layers; and
after depositing the first TCO into the trenches, dicing the silicon wafer in line with each trench to form solar cell strips.