US 11,942,560 B2
Semiconductor device structures and methods of manufacturing the same
Anbang Zhang, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Guangdong (CN)
Appl. No. 15/734,550
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
PCT Filed Aug. 13, 2020, PCT No. PCT/CN2020/108833
§ 371(c)(1), (2) Date Dec. 2, 2020,
PCT Pub. No. WO2022/032558, PCT Pub. Date Feb. 17, 2022.
Prior Publication US 2022/0052207 A1, Feb. 17, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 21/8252 (2013.01); H01L 27/0629 (2013.01); H01L 29/417 (2013.01); H01L 29/66143 (2013.01); H01L 29/868 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a first nitride semiconductor layer disposed on the substrate;
a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer;
a third nitride semiconductor layer disposed on the second nitride semiconductor layer;
a first electrode disposed on the second nitride semiconductor layer and horizontally spaced apart from the third nitride semiconductor layer; and
a second electrode covering an upper surface of the third nitride semiconductor layer and in direct contact with the first nitride semiconductor layer,
wherein the second electrode has a reversed L shape, and comprises a first part covering the third nitride semiconductor layer, and a second part penetrating the second nitride semiconductor layer and extending into the first nitride semiconductor layer, wherein a depth of the extending is less than a thickness of the first nitride semiconductor layer.